2sK2625LS no.7081-1/4 features ? low on-resistance. ? low qg. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 600 v gate-to-source voltage v gss 30 v drain current (dc) i d 4a drain current (pulse) i dp 16 a allowable power dissipation p d 2.0 w tc=25 c 30 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 600 v zero-gate voltage drain current i dss v ds =600v, v gs =0 1.0 ma gate-to-source leakage current i gss v gs = 30v, v ds =0 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3.5 5.5 v forward transfer admittance ? yfs ? v ds =10v, i d =2.5a 1.5 3.0 s static drain-to-source on-state resistance r ds (on) i d =2.5a, v gs =15v 1.5 2.0 w marking : k2625 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7081 2sK2625LS package dimensions unit : mm 2078c [2sK2625LS] o2501 ts im ta-3475 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel silicon mosfet ultrahigh-speed switching applications 1 : gate 2 : drain 3 : source sanyo : to-220fi(ls) 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 preliminary
2sK2625LS no.7081-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 700 pf output capacitance coss v ds =20v, f=1mhz 220 pf reverse transfer capacitance crss v ds =20v, f=1mhz 110 pf total gate charge qg v ds =200v, i d =5a, v gs =10v 20 nc turn-on delay time t d (on) see specified test circuit. 20 ns rise time t r see specified test circuit. 20 ns turn-off delay time t d (off) see specified test circuit. 50 ns fall time t f see specified test circuit. 25 ns diode forward voltage v sd i s =5a, v gs =0 0.88 1.2 v switching time test circuit 0 i d -- v ds it03649 it03651 it03650 it03652 0 6 3 4 5 2 1 12 4 3 5678910 1.0 r ds (on) -- v gs 4 4.0 3.5 3.0 2.5 2.0 1.5 6 8 10 12 14 16 18 20 0 i d -- v gs 0 8 6 7 5 4 3 2 1 5101520 0.5 r ds (on) -- tc --50 3.5 3.0 2.5 2.0 1.5 1.0 --25 0 25 50 75 100 125 150 7v 8v 10v 15v v gs =6v v ds =10v 25 c 75 c tc= --25 c tc=75 c tc=25 c i d =1a 2.5a 5a --25 c 25 c drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c i d =2.5a, v gs =10v i d =2.5a, v gs =15v pw=1 s d.c. 0.5% p. g r gs =50 g s i d =2.5a r l =80.0 v dd =200v v out v gs =15v d 2sK2625LS
2sK2625LS no.7081-3/4 it03653 it03655 it03654 it03656 2 ? y fs ? -- i d 0.1 10 3 5 7 2 1.0 7 5 3 23 57 1.0 23 57 0.001 i f -- v sd 0 100 10 1.0 3 5 7 0.1 0.01 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 0.3 0.6 0.9 1.2 1.5 2 v gs (off) -- tc --50 6 5 4 3 --25 0 25 50 75 100 125 150 3 ciss, coss, crss -- v ds 0 3 1000 7 2 5 3 2 100 7 5 5 1015202530 it03657 10 sw time -- i d 35 100 7 5 3 2 7 1.0 23 57 10 it03659 0 p d -- tc 0 35 30 25 20 15 10 5 20 40 60 80 100 120 140 160 it03660 0 p d -- ta 0 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 140 160 it03658 0.01 a s o 1.0 3 7 10 1.0 5 0.1 3 2 7 5 3 2 7 5 3 2 2 2 3 57 2 3 57 2 3 57 10 100 1000 tc= --25 c 25 c 75 c v ds =10v v ds =10v i d =1ma tc=75 c 25 c --25 c v gs =0 f=1mhz ciss crss coss v dd =200v v gs =10v t d (on) t d (off) t f t r i dp =16a i d =4a dc operation tc=25 c single pulse <1 s 10 s 100 s 1ms 10ms 100ms operation in this area is limited by r ds (on). drain current, i d -- a forward transfer admittance, ? yfs ? -- s cutoff voltage, v gs (off) -- v case temperature, tc -- c diode forward voltage, v sd -- v forward current, i f -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w ambient temperature, ta -- c allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a
2sK2625LS no.7081-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2001. specifications and information herein are subject to change without notice. ps
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